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Effects of Ar beam irradiated during the surface-activated bonding process on n-Si and p-Si based Schottky barrier diodes (SBDs) were investigated by atomic force microscope measurements. Charges in the electrical characteristics of SBDs were attributed to the variation in Schottky barrier heights due to the Ar beam irradiation.
Layered CdTe nanoparticles were deposited on surfaces of n-on-p crystalline Si solar cells. Their short-circuit current and conversion efficiency were enhanced due to the nanoparticle deposition. Measurements of reflectance and external-quantum-efficiency spectra as well as atomic-force-microscope observations implied that the enhancements in cell performances were attributable to textured structures...
In this letter, thin-film transistors (TFTs) were demonstrated with In2O3 channel layer prepared by metal–organic chemical vapor deposition (MOCVD). Treated by O2 microwave plasma on the In2O3 channel, high performance was obtained such as ultra-high field-effect mobility of 243 cm$^{\mathrm {\mathbf {2}}}$ /Vs, ON/OFF current ratio of $10^{\mathrm {\mathbf {7}}}$ , and high stability under negative...
Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.
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