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This paper describes a case study of semiconductor process modeling verification which has been implemented in the silicon processing course within the Microelectronic Engineering Department at the Rochester Institute of Technology. The study focuses on fully-coupled modeling and fabrication of ion implanted profiles that are annealed in a steam ambient, causing oxidation enhanced diffusion. Silvaco's...
This paper describes a simple, reliable; bulk micro- machined, micro-electro-mechanical system (MEMS) process flow for the fabrication of a wide variety of devices which has been implemented within the Microelectronic Engineering Department at the Rochester Institute of Technology. The fabrication and testing results for pressure sensors, flow sensors, micro-pumps, and micro- fluidic packaging in...
This paper describes a simple, reliable; bulk micro- machined, micro-electro-mechanical system (MEMS) process flow for the fabrication of a wide variety of devices which has been implemented within the Microelectronic Engineering Department at the Rochester Institute of Technology. The fabrication and testing results for thermopiles, pressure sensors, micro-speakers, micro- pumps, accelerometers and...
Rochester Institute of Technology started the nation's first Bachelor of Science program in Microelectronic Engineering in 1982. The program has kept pace with the rapid advancements in semiconductor technology, sharing 25 of the 40 years characterized by Moore's Law. The program has constantly advanced its integrated circuit fabrication laboratory in order to graduate students with state-of-the-art...
The design, construction and performance of an actively broadbanded MIC parametric amplifier is described. The broadbanding technique is simple with no multiple tuned circuits; the result is a 500 MHz bandwidth amplifier at 7.5 GHz that is five times less susceptive to pump instability than one of conventional design.
A microstrip bandstop filter is described that overcomes the problems of radiation and surface-wave generation at high frequencies (40 GHz). An attenuation greater than 17 dB has been measured over at least a 10% bandwidth. The peak attenuation in the band can exceed 30 dB.
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