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In this paper, the design of a microsystem for MEMS capacitive sensor with integrated data converter circuits and wireless monitoring capability has been presented. The data converter circuits operate with dual functionalities - capacitive readout and analog-to-digital (A/D) conversion without the use of a conventional A/D converter. The wireless capability is attained by taking the advantage of a...
A non-cantilever-beam micro-electro-mechanical (MEMS) based viscosity sensor is proposed. This novel vibration viscometer device utilizes thermal actuation and piezoresistive sensing. As the actuation bias is kept constant, viscosity changes can be correlated to changes in the oscillation amplitude. This proposed solution is CMOS compatible, inexpensive and reliable. This paper investigates the vertical...
This paper describes a new CMOS test chip which will be fabricated by students in required CMOS Manufacturing courses in Rochester Institute of Technology (RIT) undergraduate and graduate programs in Microelectronic Engineering. It will be used to expand CMOS technology and verify operation of analog and digital components. Also, the test chip includes a variety of CMOS compatible sensors and signal...
This paper describes a simple, reliable; bulk micro- machined, micro-electro-mechanical system (MEMS) process flow for the fabrication of a wide variety of devices which has been implemented within the Microelectronic Engineering Department at the Rochester Institute of Technology. The fabrication and testing results for pressure sensors, flow sensors, micro-pumps, and micro- fluidic packaging in...
This paper reports the results for various microelectromechanical systems, devices and structures fabricated using bulk and surface micromachined processes. These microelectromechanical systems (MEMS) are designed and fabricated at the Semiconductor Micro-Fabrication Facility Laboratory at Rochester Institute of Technology. The microactuators and sensors are designed and fabricated for proof-of-concept...
A process for fabrication of 0.25 mum CMOS transistors has been demonstrated. NMOS transistors with drain current of 177 muA/mum at VG=VD=2.5 V and a PMOS transistors with drain current of 131 muA/mum at VG=VD=-2.5 V are reported. The threshold voltages are 1.0 V for the NMOS and -0.735 V for the PMOS transistors. The mask defined gate lengths are 0.5 mum and 0.6 mum for the NMOS and PMOS, respectively...
This paper describes a simple, reliable; bulk micro- machined, micro-electro-mechanical system (MEMS) process flow for the fabrication of a wide variety of devices which has been implemented within the Microelectronic Engineering Department at the Rochester Institute of Technology. The fabrication and testing results for thermopiles, pressure sensors, micro-speakers, micro- pumps, accelerometers and...
Rochester Institute of Technology started the nation's first Bachelor of Science program in Microelectronic Engineering in 1982. The program has kept pace with the rapid advancements in semiconductor technology, sharing 25 of the 40 years characterized by Moore's Law. The program has constantly advanced its integrated circuit fabrication laboratory in order to graduate students with state-of-the-art...
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