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The field-plate (FP) technique for GaAs-based pseudomorphic high electron mobility transistors (pHEMTs) was discussed with various FP voltage, metal connection, and breakdown mechanism. In addition, these mechanisms of devices were also evaluated experimentally by their microwave and power performance. For breakdown voltage mechanism investigation, the design of experiment (DOE) with 16 transistors...
In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of...
In this work, we perform AlGaN/GaN MOS-HEMT by using ZnO/Pr2O3 as gate dielectric. After 600??C annealing, the XRD analysis shows ZnO thin films with highly crystalline characteristics, which exhibit a lattice constant (a = 3.2498, c = 5.2066) matched to GaN (a = 3.1890, c = 5.1855). The gate leakage current can be improved significantly by inserting ZnO/Pr2O3 dielectric layer; meanwhile, ZnO/Pr2O...
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200degC, 400degC and 600degC post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown...
Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al0.3Ga0.7N has the excellent performance among Al0.17Ga0.83N and Al0.25Ga0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance...
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