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Combined measurements of random telegraph noise of drain current and drain current - gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.
Conduction mechanisms in junctionless nanowire transistors (gated resistors) are compared to inversion-mode and accumulation-mode MOS devices. The junctionless device uses bulk conduction instead of surface channel. The current drive is controlled by doping concentration and not by gate capacitance. The variation of threshold voltage with physical parameters and intrinsic device performance is analyzed...
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