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This paper presents the effect of different elastic acoustic and inelastic optical electron-phonon interaction mechanisms on quantum transport and electrical characteristics of multigate silicon nanowire FETs. A 3-D quantum-mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode space that can handle electron-phonon interactions has been developed to...
In this paper we study the effect of emission and absorption processes due to inelastic optical phonons in multigate silicon nanowire transistors. We show that low-energy optical phonons reduce drain current through both phonon emission/absorption processes while high-energy phonons redistribute current spectrum inside the nanowire merely by phonon emission process without reducing the current drive...
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