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This work presented the analog behavior of nMOS Junctionless transistors in the temperature range of 100 K to 473 K investigated by experimental results and simulations. It has been shown that gm,max of JL present a parabolic-like dependence on temperature. On the other hand, the JL gm/IDS is nearly insensitive to temperature variations in the on state, which can be interesting for several analog...
Conduction mechanisms in junctionless nanowire transistors (gated resistors) are compared to inversion-mode and accumulation-mode MOS devices. The junctionless device uses bulk conduction instead of surface channel. The current drive is controlled by doping concentration and not by gate capacitance. The variation of threshold voltage with physical parameters and intrinsic device performance is analyzed...
We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.
The performances of accumulation-mode and inversion-mode multigate FETs are compared. Both simulation and experimental data are presented. Accumulation-mode devices have a higher current drive and less process variability than inversion-mode FETs.
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