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In this paper, AIM reports on γ, proton and heavy ion irradiation experiments on newly developed MCT VLWIR FPAs for Fourier transform infrared sounding applications from space in the 8–15µm spectral range. γ and proton irradiation testing have been carried out at operational temperatures with the FPAs biased. Key performance parameters such as dark current density and offset video level have been...
This paper presents stability analysis of large-scale SRAM arrays directly after terminating NBTI stress. While the impact of static NBTI is well examined for cells and arrays, the fast-recovering component was not yet measured on SRAM arrays. The novel method presented here analyzes the flipping of cells directly after the supply voltage was lowered to a specific value where the structure is most...
This paper presents Read Margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-VDD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measurement allows analysis of large arrays and correlates to SNM, but requires a dedicated test structure and long measurement time. The presented method analyzes...
This paper presents read margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-VDD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measurement allows analysis of large arrays and correlates to SNM, but requires a dedicated test structure and long measurement time. The presented method analyzes...
We present the results of a test structure that allows to measure the variation of SRAM p-MOS and n-MOS transistors in a dense environment and to apply Negative Bias Temperature Instability (NBTI) stress on the p-MOS transistors. The threshold voltage (Vth) and drain current (Id) distributions of p-MOS SRAM transistors pre and post NBTI Stress are measured and analyzed. The probability density functions...
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