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We report on the maskless epitaxial lateral overgrowth of GaN on structured Si (111) substrates and on its structural properties using transmission electron microscopy and photo-electrochemical (PEC) etching techniques. The structured silicon substrates are achieved using photolithography and dry etching; 4-μm-deep holes of 1.5μm in diameter, each separated by 2.5μm, are etched in the (111) Si surface...