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A dot-in-well structure for quantum dot (QD) growth on InP(001) vicinal substrates was introduced to increase the emission wavelength. The emission wavelength of QDs changed from 1600 nm, in conventional structures, to 1850 nm, in the proposed dot-in-well structure, when measured at room temperature. The emission intensity of this dot-in-well structure was the same as that of the conventional structure,...
In this paper, the optical pulse response of 20 layer-stacked QD-SOAs grown on an InP(311)B substrate with the strain compensation technique by using picosecond pulses of an optical frequency comb was determined. It was found the QD-SOA could respond to ultrafast pulses with a minimum pulse interval of 4.2 ps without large pattern distortions.
Gallium antimonide (GaSb) dots and thin-film GaSb using GaSb dots as nucleation layer were grown on a 2-inch Si(100) substrate by molecular beam epitaxy (MBE). Compared to our previous works in ultrahigh vacuum scanning tunneling microscopy (UHV-STM) system, higher-density and smaller-size GaSb dots were formed on the Si(100) substrate at 300?C. It is considered that the difference of Sb species and...
We simulated gain characteristics of QD-SOA with 20-layer-stacked QDs structure grown on an InP(311)B substrate. Taking piezoelectric effect in the QDs into account, the results fitted to the obtained experimental data well.
We have developed ultrafast photoconductive InGaAs/InAlAs structures for operation in the 1-µm wavelength region. The structures were grown metamorphically on GaAs substrates and show both an ultrafast photo-carrier lifetime and a high resistance.
We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 µm above the threshold current in pulsed mode.
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