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This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence of implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. Based on this novel design and implantation-free process, a 4H-SiC BJT was fabricated to reach an open base collector-to-emitter blocking...
In this paper, SiC BJTs with a blocking voltage of 1836V are characterized in power switching applications for temperatures up to 275degC. Inductive switching speeds under different load current and DC bus voltage conditions are also studied. This is the first time a SiC switch has been fully characterized at a practically useful power level (300V, 7A) and a temperature substantially higher than any...
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