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We report on amplified spontaneous broadband terahertz emission in 1–7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission...
Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate...
A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees...
Double-graphene-layer (DGL) heterostructures have recently attracted much attention due to their potential applications in high speed modulators of terahertz (THz) and infrared (IR) radiation, transistors, and THz photomixers [1]. In this work we report experimental observation of THz emission and detection in the DGL device structures. We demonstrate that the photon-assisted resonant radiative inter-GL...
We report on photonic frequency double-mixing conversion utilizing a graphene-channel FET (G-FET). Optoelectronic properties of graphene are exploited to perform single-chip photonic double-mixing functionality, which is greatly advantageous in future broadband technological conversion between optical fiber and sub-terahertz wireless communications. A 1-GHz modulation signal on a 125-GHz carrier is...
We demonstrate an intense stimulated emission of 0.1–1-μW terahertz (THz) monochromatic radiation in InP-based asymmetric chirped dual-grating-gate (AC-DGG) high electron mobility transistors (HEMTs) at 140–290K. In the research of modern THz electronics, development of compact, tunable and coherent sources operating in the THz regime is one of the hottest issues. Hydrodynamic nonlinearities of two-dimensional...
This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III–V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor...
Double-grating-gate field-effect transistors have a great potential as terahertz detectors. The double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. Low and high magnetic field detection results are used to determine the electron mobility and electron concentration, respectively, in the different parts of the channel.
We report on ultrahigh sensitive broadband terahertz detection using asymmetric double-grating-gate high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz.
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