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Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.
An in-situ cleaned and regrown 1.3-/spl mu/m InGaAIAs buried heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 2000-hour aging test.
A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported...
High-performance HBTs with a carbon-doped base layer (p=4*10/sup 19/ cm/sup -3/) are reported. The use of carbon as a p-type dopant allows the emitter-base p-n junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains h/sub FE/=50 and f/sub T/ and f/sub max/...
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