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The screen grid field effect transistor (SGrFET) is an oxide-gated FET with a novel 3D gating configuration perpendicular to the current flow in the channel. The multiple gate character of the SGrFET lends itself perfectly to compact logic applications with a reduced number of devices per gate. In this report TCAD results of both DC and transient performance of double-gate row SGrFET logic are presented...
A novel 3D Field Effect Transistor on SOI - the screen grid FET (SGFET) $for ultra-low power applications is proposed and TCAD analysis of the device is presented. The device is designed with the aim of decoupling the need for aggressive scaling of the gate oxide thickness when reducing the channel length. Other scaling objectives are: retaining low doping in the channel, maintaining the drain conductance...
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