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This paper intends to study the phenomena of thermal-caused material modifications in the principle of nanoscale electro spark during the SPM-based electric lithography. Since the direct observation of the electro spark process seems impossible in the nanoscale gap region, the molecular dynamics (MD) simulation method is applied to help investigate the influence of the thermal effect due to the Joule...
We clarify the importance of three-layers ReRAM stack-structures and provide guidelines for further optimization by both charge injection/removal and oxygen chemical potential. We determine atomistic structures corresponding to the ON-OFF switching process of ReRAMs using ab initio calculations. The cohesion-isolation of oxygen vacancies is found to be a strong driving force in the ON-OFF switching...
Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
HfOx RRAM is a most promising candidate for next generation nonvolatile memory with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have their advocators. Cell area of 4F2 and/or 3D stacking for high density applications is the determining factor of preferring unipolar device. High operation...
The semiconductor-passivating layer interfaces, as well as their dielectric properties, play important and very often dominant roles in determining HgCdTe device performance. In this work, photoconductors were fabricated on p-type mid-wave infrared Hg1-xCdxTe material using molecular beam epitaxy (MBE) grown CdTe film as the passivation layer. In order to emphasize the importance of the CdTe passivating...
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