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Two-stage degradation of p-type polycrystalline silicon thin-film transistors under dynamic positive bias temperature (PBT) stress is reported for the first time. ON-state current (\(I_\mathrm{{\scriptstyle ON}}\) ) gradually increases in the first degradation stage while dramatically drops in the second degradation stage, which are, respectively, due to the channel length shortening effect, caused...
Degradation mechanisms of low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) under various dynamic stresses are reviewed. Dynamic hot carrier (HC) mechanism under gate and drain stress pulses is interpreted based on non-equilibrium PN junction model. For synchronized gate and drain stress pulse, both dynamic HC and self-heating (SH) mechanism are involved. For n-type TFTs,...
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