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We report a top-down fabrication technique for direct integration of Ni2Si/Si heterojunction arrays on n-type MOSFET gate terminal to realize sensitive field-effect phototransistors (PTs). It was observed that exposing gate area to light (\(\lambda =655\) nm) leads to significant modulation of threshold voltage (\(V_{\mathrm {TH}}\) ) of PT in comparison with a conventional MOSFET. By analyzing...
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