The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents the design of a GaN HEMT based boost DC/DC converter and a dynamic supply modulator suitable for DC to RF power conversion improvements in RF transmitters. This work addresses a contribution to energy efficiency enhancements of active phased-array antennas. A main aspect reported here concerns a circuit implementation of a boost converter and its specific gate driver in GaN technology...
This paper focuses on the time domain envelope measurements based analysis of power amplifiers in order to improve both linearity and efficiency of microwave transmitters. First of all, a versatile time domain envelope test bench is presented. Then, two applications related to those RF PA measurements are reported. The first application concerns linearity characterization that can be specified in...
Activities have been carried out to determine the best electrical operating conditions of GaN HEMT that enable maximum power added efficiency at L-band for switch mode power amplifiers (class F, inverse class F and class E). Satellite radio navigation applications (Galileo) are targeted. Maximization of power added efficiency is of prime importance to save DC power consumption, reduce self heating...
This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15 W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band. The work reported here...
This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15 W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band. The work reported here...
This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band...
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers.
A report is presented on the specific design of a GaN HEMT cascode cell demonstrating significant improvement for flip-chip distributed power amplifiers. The active device is a 8 times 50 mum AlGaN/GaN HEMT grown on SiC substrate. The GaN-based wafer integrating the active part is flip-chipped onto an A1N substrate via electrical and mechanical bumps. The cascode cell integrates matching elements...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.