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For the first time, we report that the copper oxide (CuxO) based resistive random access memory (RRAM) cell can achieve 104 cycles (i.e. ~10x better) as a new record as well as elimination of the initial ??forming?? than reported in literature. The copper oxide is integrated in MIM (metal-insulator-metal) structure and is grown by plasma oxidation of Cu substrate, with CuO near upper surface and graded...
Cu-oxide grown by plasma oxidation is found typically composed of upper CuO layer and inner graded CuxO. The initial forming process leads to endurance degradation but can be improved by annealing in an oxygen deficient ambient. By using ramped pulse and verification algorithm, the endurance and programming voltage shift are further ameliorated.
The forming process, which is the first transition from fresh state to low resistance state, was investigated in CuxO memory films prepared by plasma-induced oxidation. X-ray photoelectron spectroscopy investigation of surface chemical bonds of CuxO films and Auger electron spectroscopy depth spectra show that the formation of a highly resistive CuO layer on the CuxO surface is the main reason for...
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