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The three dimensional (3D) innervation zone (IZ) imaging approach (3DIZI) has been developed in our group to localize the IZ of a particular motor unit (MU) from its motor unit action potentials decomposed from high-density surface electromyography (EMG) recordings. In this study, the developed 3DIZI approach was combined with electrical stimulation to investigate global distributions of IZs in muscles...
A new CuxSiyO resistive memory, which is different from Cu-doped SiO2 or CuxO binary oxide, is integrated successfully in standard logic technology for the first time. Key breakthrough is that data retention (10 years@ 150°C), resistance distribution (with 50x window@125°C ) and disturbance immunity significantly improved with integration simplicity advantage, as demonstrated on a 1Mb test chip. The...
In this paper, a novel hollow micro-disk mass sensor based on mode generation and degeneration principle is presented, which has the advantages of self-compensating environmental fluctuation and eliminating viscous damping as vacuum packaged. The device configuration, including the width of support beams, the channel height and the allocation of the sensing piezoresistors are carefully analyzed and...
We present the integration of super long horizontally aligned single-walled carbon nanotubes (SWNTs) on the micromachined wide trenches for infrared (IR) sensor application. The HA-SWNTs were found to be able to grow across trenches as wide as 1000 mum forming parallel SWNT bridges on the trench. The sensor fabricated with only one process shows sharp and remarkable responses to the ~ 4 mW IR radiations...
The long retention, more than 10 years at 85degC, and excellent thermal reliability memory of TiN-CuxO-Cu (with TiN cap layer as top electrode) is reported. TiN cap layer results in more stable reset from low resistance state (LRS) to high resistance state (HRS) under positive pulse and SET under negative pulse, which is beneficial for providing large programming current or voltage on the resistive...
For the first time, we report that the copper oxide (CuxO) based resistive random access memory (RRAM) cell can achieve 104 cycles (i.e. ~10x better) as a new record as well as elimination of the initial ??forming?? than reported in literature. The copper oxide is integrated in MIM (metal-insulator-metal) structure and is grown by plasma oxidation of Cu substrate, with CuO near upper surface and graded...
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