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A 3-D solid-state drive system with through-silicon via (TSV) technology and boost converter is presented in this paper. The proposed boost converter enables the supply voltage reduction to 1.8 V and smaller NAND Flash memory chips. From the simulation results, the conventional bonding-wire technology can achieve only eight NAND chip integrations not only due to their structural problem but also due...
The fastest ever 4.2 Gbps 3D-Solid State Drive (SSD) with multi-level cell (MLC) NAND flash memories is proposed. The proposed NAND channel number detector automatically detects the number of channels, that is, the number of NAND chips written at the same time. Based on the number of channels, the intelligent program-voltage booster adaptively optimizes the switching clock. As a result, the proposed...
This paper investigates the effect of the TSV resistance (RTSV) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When RTSV is 0 Omega, both the rising time (trise) from 0 V to 15 V and the energy during boosting (Eloss) of the output voltage (VOUT) are 10.6% and 6.6% of the conventional charge pump respectively. In contrast, when RTSV is 200 Omega, for example,...
A low-power program-voltage generator (PVG) using a boost converter with an adaptive-frequency and duty-cycle (AFD) controller is implemented. SSD consists of the HVMOS chip (0.35 x 0.50 mm2), the AFD controller chip (0.67 x 0.28mm2), a 270nH 0.5Omega inductor in an interposer (5 x 5mm2), and a 56 nm 16 Gb NAND Flash memory chip.
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