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We developed a facile route for separating and detecting phenethylamine from plasma using photonic crystal biosilica, which serves as a new lab-on-chip platform combining surface-enhanced Raman scattering sensing and thin layer chromatography.
We experimentally demonstrate 2-D photonic crystal slab-coupled plasmonic nanocapsules for surface enhanced Raman spectroscopy (SERS). A strong Raman signal enhancement can be unambiguously detected even with a low concentration 10 nM dye molecules.
Metal-insulator-semiconductors structures (MIS) with a layer of silicon nanocrystals embedded within two SiO2 layers are fabricated by using plasma enhanced chemical vapor deposition. By using current-voltage (I-V) measurements with different sweep rates, we study the mechanism of electrons and holes charging/discharging characteristic of the MIS structures. Distinct current peaks duo to electrons...
Luminescence properties of the oxidized Si-rich SiNx films prepared at low temperature were investigated. Strong photoluminescence from the samples can be observed at room temperature. The spectral profile exhibits some obviously modulated features upon the excited wavelength. By employing the oxidized Si-rich SiNx films as the luminescent active layers, the devices with low turn-on voltage have also...
In this paper we present recent experimental results on SiC MOSFETs, IGBTs, and thyristors, and propose a consistent methodology for comparing unipolar and bipolar power devices as a function of blocking voltage and switching frequency.
Quality control has demanded methods to quantify the mixing state of nanoparticles imbedded in polymeric materials. Several quantification methods are reviewed based on the analysis of images from electron microscopy. This includes the quadrat-based skewness, nearest neighbor distance, the k-function and Monte Carlo method. A novel method in which the dispersion and distribution are evaluated respectively...
This paper presents for the first time (110) PMOS characteristics without Rext degradation, allowing investigation of fundamental mobility and demonstration of drive current Ion in excess of 1mA/mum at Ioff =100 nA/μm.
A scalable poly-Si/AlN/HfSiO gate stack, implementing a new aluminum nitride (AlN) cap layer, combined with oxygen diffusion barrier, halo and counter doping engineering, high temperature spike anneal for gate and junction activation, and optional inverted gate implant, has been successfully developed to fully offset the large threshold voltage (Vt) shifts in poly-Si/HfSiO devices and achieve good...
Silicon carbide power switching devices have made remarkable progress in the past decade. As blocking voltage increases, the resistance of power switches becomes dominated by the drift region, and the advantage of SiC over silicon increases. This is illustrated by the degree to which SiC unipolar devices are approaching their theoretical limits at blocking voltages around 10 kV. Efforts are currently...
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