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Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, its absorption coefficient is low for photons in the wavelength ranges between 600nm and 1100nm. For high efficiency thin film modules, effective light trapping is essential. Traditional...
Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH3 during Ge deposition gives n-type poly-Ge with...
Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum oxide (AAO) and a distributed Bragg reflector (DBR) in the backside of thin film silicon. Simulation results show that this quasi-periodic AAO structure has a stronger light trapping...
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