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The solid phase reaction of yttrium thin film and silicon substrate was investigated in situ with help of RHEED technique. For the first time, we have measured directly yttrium silicide formation temperature which can be as low as 120°C for a thin (60 ) metal layer deposited on a Si(111) substrate. For this purpose, we developed a new experimental technique. A study of the growth of thin (10-150...
The ultrathin high-purity single-crystal indium films with atomically flat surfaces, and precisely known thicknesses in UHV conditions were prepared These films were deposited on the Si(111)-(7×7) and Si(111)-(6×6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by. reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations...
A new method of analysing shapes of RHEED intensity oscillations observed during epitaxial growth of ultrathin films is presented. The intensity of the specular electron beam is computed by solving the one-dimensional Schrödinger equation. The method can be used for interpreting data collected at very low glancing angle (< 1°) of the incident electron beam. In the paper we show numerically determined...
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