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Fabrication of Si (nc-Si), Ge (nc-Ge), and Si 1−x Ge x (nc-Si 1−x Ge x ) nanocrystals embedded in SiO 2 matrix is achieved by thermal annealing of magnetron-sputtered thin films. Effects of annealing conditions, namely duration and temperature, as well as Ge content on the photoluminescence properties are investigated. Origin and evolution of the photoluminescence...