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In this paper, we present another source number estimator without the necessary eigendecomposition, it is based on the Lanczos process and Sturm algorithm and Finally, we provide a simulated data example to evaluate the proposed estimator.
For the first time, SiC planar p-IGBTs with 5.8 kV of blocking voltage have been fabricated and characterized. The device exhibits a differential on-resistance of ~ 570 mOmegamiddotcm2 at the gate bias of -30 V at 25degC, and decreases to ~ 118 mOmegamiddotcm2 at 200degC, ~108 mOmega middot cm 2 at 300degC, respectively. The median hole mobility in the inversion channel is 2.3 cm2/Vmiddots, and increases...
In this paper, we present another novel source number estimator without the complete eigendecomposition, it is based on the Lanczos process and Sturm algorithm. Finally, for the case of a uniform circular array of six isotropic sensors spaced a half wavelength apart with additive and uncorrelated white noise, we provide a simulated data example to evaluate the proposed estimator, which is proved to...
In this paper, we present another method for DOA estimation without the necessary complete eigendecomposition, it is based on the improved Lanczos process and Sturm algorithm as well as Dichotomy method, and Finally, in the case of a Uniform Linear Array of eighteen isotropic sensors spaced a half wavelength apart with additive and uncorrelated white noise, we provide a simulated data example to evaluate...
High performance Ge p- and n-MOSFETs with CVD HfO2 gate dielectric were fabricated. Charge trapping and Vth instability were investigated systematically for the first time for Ge MOSFET with different surface treatments (silicon passivation and surface nitridation) and compared to the Si devices. Our results show that: (1) Ge devices with silicon passivation yield better electrical performance and...
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