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SiC-SIT power semiconductor switching devices has an advantage that its switching time is high speed compared to those of other power semiconductor switching devices. We adopt newly developed SiC-SITs which have the maximum ratings 800V/4A and prepare a breadboard of a conventional single-ended push-pull(SEPP) high frequency inverter. This paper describes the characteristics of SiC-SIT on the basis...
This paper presents a single ended push-pull (SEPP) high frequency inverter incorporating a reverse blocking active auxiliary quasi-resonant circuit using bipolar mode static induction transistors (BSITs) as active switches. This inverter can realize soft switching of the active switches over wider output power regulation range compared with the conventional SEPP inverter. It is performed by incorporating...
B-SIT has an advantage that its on-resistance is extremely low compared to those of other power semiconductor switching devices. Accordingly, we can suppress its conduction losses during large current operation. Then, high conversion efficiency is expected when B-SITs are utilized as the switching devices of high frequency inverters. Here, we adopt newly developed B-SITs which have the maximum ratings...
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