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We present a paper on the influence of an oxygen-plasma treatment technique for III-nitride (III-N) heterojunction field-effect transistors (HFETs) using a plasma-enhanced atomic layer deposition (PE-ALD) system. The oxygen plasma is excited in a remote location to avoid the plasma damage. After the plasma treatment, the threshold voltage was shifted from to 0 V and a two-orders-of-magnitude...
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