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A dopant-segregated Schottky barrier MOSFET is simulated by Monte Carlo method in this paper. The feature that dopant-segregated structure can improve on-current is revealed. The influence of dopant-segregated structure parameters on device performance is investigated, and the guideline for device design optimization is that the dopant-segregated region should overlay the whole Schottky barrier region...
The impact of gate misalignment on the performance of dopant-segregated Schottky Barrier MOSFET (DS SBTs) and on the carrier transport is investigated by Monte Carlo method. The simulation results show that gate misalignment with dopant-segregated structure (DSS) has less significant impact on drain current than that without DSS. The influence of gate misalignment with DSS becomes notable only when...
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