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The electrical characteristics of layered Al2O3 /Pr2O3/Al2O3 metal-insulator-metal (MIM) capacitors for RF device applications are presented for the first time. This advanced dielectric layer system 4-nm Al2O3/8-nm Pr2O3/4-nm Al2O3 shows a high capacitance density of 5.7 fF/mum2, a low leakage current density of 5times10-9 A/cm2 at 1 V, and an excellent dielectric loss behavior over the studied frequency...
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