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Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify...
The selective oxidation on InAlAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative...
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