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The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density...
GaN MSM photodetectors (PDs) and p-i-n photodetectors (PDs) with E-gun SiO2 passivation and plasma enhanced chemical vapor deposited (PECVD) SiO2 passivation were fabricated and characterized. Inductance couple plasma (ICP) etching would cause significant damage on GaN MSM photodetectors. The damage was proved to induce leakage current via the surface of device by using emission microscopy inspection...
The oxidation of InAlAs and its application to InAlAs/InGaAs metal-oxide-semiconductor metamorphic high-electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid-phase solution at near room temperature. As compared...
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