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The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density...
The zinc oxide (ZnO) nanostructure grown onto the carbon nanotube (CNT) surface could enhance the CNT FE characteristics. However, the ZnO nanostructure morphology is an important parameter to decide the FE enhancement. This study used thermal chemical vapor deposition (TCVD) to form ZnO nanostructure onto CNT bundle surface, and adjust the distance (D) between the CNT bundle and the zinc acetate...
An InGaP/InGaAs/GaAs metal-oxide- semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves...
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