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With increasing scale and complexity in pHEMT circuit and dimension shrinking in unit pHEMT devices, distributed effects are becoming more crucial than ever. During design of amplifiers, precise prediction of the resistances of a device is vital to simulation result due to the direct impact on impedance. This work reports a set of experiments utilizing different testing structures to reveal how a...
Electromagnetic (EM) only HEMT model was been proposed in. In this paper, complete EM simulation has been performed on entire switch circuit. The dependences of switch performances on distributed and coupling effects can be quantitatively explained, and the prediction accuracy can be remarkably improved. Further, the EM simulation has been applied to an assembled switch with bond wires. Since a closed...
A physics-based analytic model with no fitting parameters is introduced for the AlGaN/GaN HFET. For unsaturated operation, non-linear analytic models for the I-V characteristics in the two access regions and beneath the gate are developed. The resulting equations are linked together by voltage and current continuity at the boundaries. Good agreement between the model and corresponding simulations...
A physics-based analytic model is built based on the discovery of a new zone in AlGaN/GaN HFETs that is observed in 2D device simulations, especially at high drain bias. The zone is located in the drain access region and is named the "charge deficit zone" after its particular property of a partially filled quantum well. This zone plays an important role when the HFET is under high drain...
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