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Temperature dependent model is conventionally developed with 1) individual linear model extraction at each temperature and 2) temperature dependence extraction for each model parameter. A novel approach based on a multi-temperature optimization is proposed in this study. The new approach is faster and more accurate since the linear models at different temperatures are extracted simultaneously and...
Traditionally, the on-state breakdown of pHEMTs is attributed to impact ionization and thermal breakdown under high Vd stress. Nonetheless, neither of these hypotheses perfectly explains all observations, including but not limited to when on-state breakdown happens and how it happens in devices with various structures. A systematic study on the on-state breakdown of pHEMTS carried out by our group...
The Skyworks Capacitor model for ESD applications is described and discussed. A Skyworks ESD Capacitor is modeled as an ideal capacitor in parallel with a leakage current source, along with a resistor to the ground modeling the substrate leakage at each terminal. The current-voltage and small-signal characteristics predicted by the model coincide with measurement results. Furthermore, by employing...
A comprehensive nonlinear model of GaAs resistor is developed based on DC, pulse and power measurements. The model accounts for electrical and thermal feathers such as velocity saturation, self-heating and breakdown effects. The resistor nonlinearity is mainly due to the velocity saturation, and enhanced by self-heating effect. The model provides accurate performances in DC, transient and harmonic...
With increasing scale and complexity in pHEMT circuit and dimension shrinking in unit pHEMT devices, distributed effects are becoming more crucial than ever. During design of amplifiers, precise prediction of the resistances of a device is vital to simulation result due to the direct impact on impedance. This work reports a set of experiments utilizing different testing structures to reveal how a...
Electromagnetic (EM) only HEMT model was been proposed in. In this paper, complete EM simulation has been performed on entire switch circuit. The dependences of switch performances on distributed and coupling effects can be quantitatively explained, and the prediction accuracy can be remarkably improved. Further, the EM simulation has been applied to an assembled switch with bond wires. Since a closed...
Electromagnetic (EM) only HEMT model has been proposed and realized with commercial available EM simulator. EM analysis has been applied, for the first time, to the intrinsic part of HEMT device. The small signal behaviors of HEMT can be accurately predicted based directly on the layout and process information. After introducing two EM HEMT models for HEMTs in both on and off states, entire switch...
Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise...
A novel approach for generating nonlinear signal model with accurate noise response is proposed and demonstrated, which is realized with a cascade of a linear noise and a nonlinear signal models. The noise model behaves as a 0 Ohm resistor with arbitrary noise response. The noise response is described by a correlation matrix calculated directly from measured noise data. The noise model can easily...
A scalable nonlinear resistor model is proposed, which is suitable for epitaxial layer resistor on GaAs substrate commonly used in GaAs MMIC. Analytical expressions describing the geometry dependences of the model parameters are provided. The proposed scalable model, implemented into a circuit simulator, accurately predicts the DC, S parameter, and power performance of the resistors with various geometries...
A large signal model is proposed for GaAs epitaxial layer resistor, which can be used in resistor design, characterization and circuit simulation. The resistor I-V behavior can be excellently fitted by a hyperbolic tangent expression with only two model parameters. By taking into account the nonlinearities, frequency dispersion, and parasitic effect, the proposed model accurately predicts DC, small...
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