The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We evaluated the stress-induced effect on electronic characteristics of nMOSFETs using mechanical stress simulation and drift-diffusion device simulation. The simulation model includes the electron mobility model that takes the stress effects into consideration. We evaluated the variation in the electronic characteristics of nMOSFET during the actual resin-molding packaging process (QFP process)....
Stress-induced shifts in the DC characteristics of nMOSFETs were investigated experimentally by the 4-point bending method. We measured the device shape dependence and load direction dependence of the DC characteristic shifts. We also carried out drift-diffusion device simulation in order to evaluate the experimental results. The simulation model includes the electron mobility model that takes the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.