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This paper presents an overview of our recent work on high speed, oxide confined, 850 nm vertical cavity surface emitting lasers (VCSELs). With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, we have reached a modulation bandwidth of 23 GHz and demonstrated 40 Gbps transmission. Using an integrated mode filter for reducing the spectral width...
An 850 nm vertical-cavity surface-emitting laser is modulated at 32 Gb/s using pulse-amplitude modulation with four levels. Transmitter predistortion generates an optimized modulation waveform, which requires a receiver bandwidth of only 15 GHz.
Orthogonal multipulse modulation is demonstrated to allow ≈30 Gb/s real-time transmission over multimode fibre using an 850 nm VCSEL. The scheme eases considerably component bandwidth requirements compared with conventional NRZ modulation.
We report on speed enhancement of 850 nm oxide confined VCSELs by photon lifetime reduction and demonstrate a 23 GHz modulation bandwidth and error-free operation at 40 Gbit/s.
Higher speed short-wavelength (850 nm) VCSELs are required for future high-capacity, short-reach data communication links. The modulation bandwidth of such devices is intrinsically limited by the differential gain of the quantum wells (QWs) used in the active region. We present gain calculations using an 8-band k??p Hamiltonian which show that the incorporation of 10% In in an InGaAs/AlGaAs QW structure...
We report on large aperture, oxide-confined VCSELs at 850 nm with modulation bandwidths in excess of 20 GHz and demonstrate large-signal modulation up to 28 Gbit/s at a bias current density of only 10 kA/cm2.
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