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Design of high-performance electronic components with stable static and dynamic characteristics requires a study of self-heating on electrical properties. TLM method is used to model electrothermal behavior of PIN diodes. Simulation results show a non-uniform temperature distribution in the device. TLM simulation results are in good agreement with those obtained by DESSIS-ISE commercial simulator...
Electrical properties of ZnO/SiC Schottky diodes with two SiC polytypes and N and P doping are investigated. Characterization was performed through I–V and C–V–f measurements. Schottky barrier height (Φb), ideality factor (n), and series resistance (Rs) were extracted from forward I–V characteristics. (Φb), carrier's concentrations (Nd-Na) and (Rs) frequency dependence were extracted from C–V–f characteristics...
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