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Charge trapping kinetics and chemical nature of defects present in Al/TaYOx/strained-Si/Si0.8Ge0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.
Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental...
As scaling laws become less effective in boosting performance for CMOS devices for 90 nm and below, substrate- and process-induced strain engineering are playing an ever increasing role in performance enhancement. Strained-Si MOSFETs are also attractive for high speed and low power applications (Maiti et al., 2007). Ultra thin SiO2 gate dielectrics, of less than 1.5 nm in thickness, are needed for...
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