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Reliability characteristics of TaAlOx high-k dielectric MIM capacitors are reported. TaAlOx films have been deposited by RF co-sputtering of Ta2O5 and Al2O3 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAlOx-based MIM capacitors have been studied under constant current stressing...
Charge trapping/detrapping in Al/ZrO2/GeOxNy/p-Ge MIS capacitors have been studied under dynamic voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of the oxide as a function of the stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and...
In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, and thus forming a TiO2/GeOxN3/Ge stacked-gate structure with improved interfacial and electrical properties. Charge trapping,...
Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping kinetics and chemical nature of defects present in ultrathin high-k dielectric films deposited on p-Ge (100) substrate. Both the band and defect-related electron states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. The interface trap spectrum in Ge/high-k...
This paper report on the reliability properties of microwave-plasma deposited ultrathin high-k gate dielectric (ZrO2 ) films on strained-Si/SiGe layers. Stress induced leakage current; trap centroid and charge trapping behavior under constant current and voltage stressing in both polarities have been studied
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