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Charge trapping kinetics and chemical nature of defects present in Al/TaYOx/strained-Si/Si0.8Ge0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.
Ultra thin (~6-7 nm) silicon-oxynitride films have been deposited on Strained-Si/Si0.8Ge0.2 layers at high temperature of 900degC and 1000degC using rapid thermal nitridation in O2+N2 ambient. The border trap (Qbt) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed...
We demonstrates a complete Technology CAD (TCAD) methodology that addresses the manufacturing challenges posed by rising technological complexity, increasing process variability and shrinking time-to-market windows. Using TCAD simulations as input, Process Compact Models are created to enable efficient analysis of complex and multivariate process-device relationships, with applications to enhancing...
Meeting performance targets of 22 nm Si- CMOS and beyond, as per 2006 ITRS update, will require innovation at all levels of CMOS development, including new channel materials, device design, integration, circuit design, and system architecture. In new channel materials, some of the options under consideration include (a) local and global strain, (b) Si surface orientation, and (c) non-Si materials...
The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time.
Device simulation has been used to study the performance enhancement prediction for buried SiGe-channel p-MOSFETs. Steady state self-heating is modeled via the inclusion of thermal-flow analog auxiliary sub-circuits.
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