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Reliability characteristics of TaAlOx high-k dielectric MIM capacitors are reported. TaAlOx films have been deposited by RF co-sputtering of Ta2O5 and Al2O3 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAlOx-based MIM capacitors have been studied under constant current stressing...
Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental...
Advanced metal-insulator-metal capacitors with ultra thin (EOT-2.3-5.3 nm) RF sputter-deposited TaAlOx dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MIM capacitor. The Weibull distribution function, which is based on the weakest-link theory,...
Ultra thin high-k ZrO2 films (14 nm) have been deposited on germanium at a low temperature (~150degC) using microwave plasma enhanced chemical vapor deposition (PECVD) technique. Several samples were NO-plasma nitrided before deposition of the high-k films to minimize the surface roughness and interdiffusion of germanium. Using Capacitance-time (C-t) technique the value of bulk generation lifetime...
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