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Defect states of hydrogenated amorphous silicon nitride (a-SiNx:H) thin films were measured using the thermally stimulated exoelectron emission spectroscopic method. The defect states of films with nitrogen to silicon composition ratios (x) of 0.92, 1.21, and 1.44 were found to be located 1.66, 1.77, and 1.82eV below the conduction band minimum, respectively.We confirmed that the hydrogen concentration...
Toughness and high elastic elongation are important requirements for polyimide films used as substrates in flexible displays. However, these properties can be altered by imidization during the thermal treatment. In the present study, we investigated a probable mechanism to enhance the toughness by shrinking fluorinated polyimide films containing benzidine moieties. A higher degree of fluorination...
We report the thermal transition and concomitant morphology change of polyimide films, investigated through dynamic mechanical analyses, thermo-mechanical analyses, and X-ray diffraction spectroscopy. For this study, highly transparent polyimide films composed of 3,4,3′,4′-biphenyltetracarboxylic dianhydride and fluorinated diamines, 2,2′-bis(trifluoromethyl)-4,4′-diaminobiphenyl, are prepared through...
The effects of the surfactant elimination from single wall carbon tube (SWNT) films on the physical/electrical properties of SWNT films are concretely studied. The surfactant, which helps to disperse the SWNTs in polar solvent without damage, completely wraps SWNT in film as well as in solution condition and therefore, it still critically precludes from showing up the original characteristics of SWNT...
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