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IN this paper, various FinFETs with the different fin-width and gate-length were fabricated and characterised using SEM and cross-sectional STEM imaging. It was found that the standard deviations of the Vth of the pMOS and nMOS FinFETs are almost the same and the main Vth variation source was the work function variation of the TiN metal gate. Also, the on-current variation for TiN FinFETs was predominated...
FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of Vt variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition,...
Measurement-based analysis of the parasitic resistance (Rpara) of FinFETs was extended to investigation of Rpara fluctuation, which could cause severe on-current variation. Rpara was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in Rpara is observed for fin thickness below 25 nm due...
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