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Thin layers of topological insulator materials are quasi‐2D systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, the Josephson effect, magnetotransport, and weak anti‐localization are studied in bottom‐gated thin Bi2Te3 topological insulator films. The experimental carrier...
Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2nm thin Al layer fully oxidizes...
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