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The temperature dependence of the electroluminescence (EL) spectral intensity of two blue (In,Ga)N/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) without and with an additional n-doped (In,Ga)N electron reservoir layer is investigated between 20 and 300K. The emission region of the LEDs, which have been prepared by metal-organic vapor-phase epitaxy, consists of three In 0. ...