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A compact model for double-gate tunnel FETs (TFETs) with gate–drain underlap (DG u-TFET) is proposed which accounts for the alleviation of ambipolar current and Miller capacitance (${C}_{\textrm {dg}}$ ) compared with double-gate tunnel FETs (DG TFET). The ON-state current degradation caused by the underlap is reproduced by extending the ideal DG TFET model with an effective resistance between the...
In this paper, a new PNPN tunnel field-effect transistor with L-shaped gate (LG-PNPN TFET) is proposed and investigated by numerical device simulator bringing significant on-state current enhancement. Higher drive current is achieved at VDD = 1.0V than traditional PNPN TFET because of both the line and point tunneling between the source and N+ pocket. Key parameters like the pocket width and doping...
An asymmetric Schottky and P-N junction source/drain MOSFET contains a conventional P-N junction and a hybrid junction for the source and drain or vice versa. Owing to the asymmetric source/drain structure, this device could be used in two different situations: Schottky-junction source MOSFETs and Schottky-junction drain MOSFETs. Performances of MOSFETs featuring a gate length of 100 nm with Schottky-junction...
We present a fly-inspired integrated motion image sensor for autonomous navigation with on-chip optic flow computation, mismatch compensation, and programmable spatial filters. The sensor computes spatial motion patterns from local motion signals extracted by elementary motion detectors (EMDs). Floating gate transistors are used to cancel fabrication mismatch in the EMDs and also to program spatial...
The dual-material gate and asymmetrical halo structure is used in surrounding gate MOSFET to improve the performance. By treating the device as three surrounding-gate MOSFETs connecting in series and maintaining current continuity, a comprehensive drain current model is developed for it. It is concluded that the device also exhibits increased current drivability and improved hot carrier reliability...
In this paper, for the sake of better global coverage, we introduce a novel triple-layered satellite network architecture including Geostationary Earth Orbit (GEO), Highly Elliptical Orbit (HEO), and Low Earth Orbit (LEO) satellite layers, which provides the near-global coverage with 24 hour uninterrupted over the areas varying from 75° S to 90° N. On the basis of this architecture, we propose a QoS-aware...
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