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This paper presents a reliability study of an AlGaN/GaN high electron mobility transistor (HEMT) by the photon emission (PE) and the spectral photon emission (SPE) techniques. The backside PE analysis of the studied AlGaN/GaN HEMT identifies PE signatures at the gate foot edge on the drain side, and at two new positions: under the middle of the gate or at the gate foot edge on the source side. The...
This article presents a robustness study of SiC power MOSFETs to Electrostatic Discharge (ESD), by photon emission (PE) and spectral PE techniques (SPE). Investigations in different polarization modes are performed in photoemission PE, and a linear dependence in gate voltage has been identified. A decrease in the intensity of the ESD degraded device emissions has been noticed. A SPE system has been...
This paper proposes an analysis of the static behavior of a SiC-MOSFET power transistor for temperature variations. The commercial transistor model (CMF10120D Cree 1200V/24A) is used. The approach consists to exploit the Spice electrical model provided by the constructor and to set its limits. Two main parameters: the threshold voltage and mobility are investigated to meet the needs of the static...
This paper describes the conception and making of an ageing workbench for power microwave transistors. This bench has the particularity to address high power components reaching one KW pulse operating, over the L-band with in-situ electrical measurements process. Considering three kinds of stresses, we present results regarding the performance and reversible damage of a commercial silicon transistor...
Today, ultra fast telecommunication systems use very high frequencies for data rates. Associated to these high frequencies, there is a need for high speed photodetectors, and by consequence the characterisation of such devices is primordial.We focus here on the optical heterodyne technique, which is suitable for photodiode bandwidth characterisation. We first review the theory of heterodyne technique...
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