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In this paper, a correlation between the I-V slope at low fields and TDDB voltage acceleration is demonstrated for the first time, based on a wide range of data from 32 nm to 130 nm node hardware. The data supports the radicE model, which is based on electron fluence (leakage current) driven, Cu catalyzed, low-k dielectric breakdown. Using this correlation, a fast wafer level screen method was also...
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