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This paper investigates the cell stability of recently introduced four-transistor (4T) and conventional six-transistor (6T) fin-shaped field-effect transistor static random access memory (SRAM) cells operating in a subthreshold region using an efficient model-based approach to consider the impact of device variations. Compared with the 6T cell, this paper indicates that 4T SRAM cells exhibit a better...
This work investigates the stability and AC performance of standard tied-gate 6T and several novel sub-threshold FinFET SRAM cells using independent-gate control technique. Significant nominal READ Static Noise Margin (RSNM) improvements are observed in these novel cells with the tolerable degradation of “cell” READ access time. However, Write-ability deteriorates and becomes a serious concern for...
This paper analyzes and compares the stability, margin, and performance of ultra-thin-body (UTB) SOI 6T SRAM cells operating in subthreshold region with single mid-gap and dual work function (WF) design. Our results indicate that UTB SOI 6T SRAM cells using dual quarter band-gap WF devices (NFET/PFET = 4.35 eV/4.95 eV) show comparable read static noise margin (RSNM) and 84% improvement in write static...
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